Part Number Hot Search : 
80C186XL LTC2251 80T01 2316226 1N751 A8512 AK4385ET DZ11B
Product Description
Full Text Search
 

To Download BAV99LT1-D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2000 september, 2000 rev. 1 1 publication order number: bav99lt1/d bav99lt1 preferred device dual series switching diode maximum ratings (each diode) rating symbol value unit reverse voltage v r 70 vdc forward current i f 215 madc peak forward surge current i fm(surge) 500 madc repetitive peak reverse voltage v rrm 70 v average rectified forward current (note 1.) (averaged over any 20 ms period) i f(av) 715 ma repetitive peak forward current i frm 450 ma nonrepetitive peak forward current t = 1.0  s t = 1.0 ms t = 1.0 s i fsm 2.0 1.0 0.5 a thermal characteristics characteristic symbol max unit total device dissipation fr5 board (note 1.) t a = 25 c derate above 25 c p d 225 1.8 mw mw/ c thermal resistance, junction to ambient r  ja 556 c/w total device dissipation alumina substrate (note 2.) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r  ja 417 c/w junction and storage temperature range t j , t stg 65 to +150 c off characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit reverse breakdown voltage (i (br) = 100 m a) v (br) 70 vdc reverse voltage leakage current (v r = 70 vdc) (v r = 25 vdc, t j = 150 c) (v r = 70 vdc, t j = 150 c) i r 2.5 30 50  adc diode capacitance (v r = 0, f = 1.0 mhz) c d 1.5 pf forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f 715 855 1000 1250 mvdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc) (figure 1) r l = 100  t rr 6.0 ns forward recovery voltage (i f = 10 ma, t r = 20 ns) v fr 1.75 v 1. fr5 = 1.0  0.75  0.062 in. 2. alumina = 0.4  0.3  0.024 in. 99.5% alumina. device package shipping ordering information case 318 sot23 style 11 http://onsemi.com bav99lt1 sot23 3000/tape & reel marking diagram a7 m a7 = device code m = date code 1 2 3 preferred devices are recommended choices for future use and best overall value. 3 cathode/anode anode 1 cathode 2
bav99lt1 http://onsemi.com 2 notes: 1. a 2.0 k w variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2 k 820 w 0.1 m f dut v r 100 m h 0.1 m f 50 w output pulse generator 50 w input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1 ma) i f input signal figure 1. recovery time equivalent test circuit curves applicable to each diode i r , reverse current (a) m 100 0.2 0.4 v f , forward voltage (volts) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (volts) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (volts) 0.64 0.60 0.56 0.52 c d , diode capacitance (pf) 246 8 i f , forward current (ma) t a = 25 c t a = -40 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c figure 2. forward voltage figure 3. leakage current figure 4. capacitance
bav99lt1 http://onsemi.com 3 information for using the sot23 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. sot23 mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot23 power dissipation the power dissipation of the sot23 is a function of the drain pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sot23 package, p d can be calculated as follows: p d = t j(max) t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 225 milliwatts. p d = 150 c 25 c 556 c/w = 225 milliwatts the 556 c/w for the sot23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. there are other alternatives to achieving higher power dissipation from the sot23 package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
bav99lt1 http://onsemi.com 4 package dimensions sot23 (to236ab) plastic package case 31809 issue af dim a min max min max millimeters 0.1102 0.1197 2.80 3.04 inches b 0.0472 0.0551 1.20 1.40 c 0.0385 0.0498 0.99 1.26 d 0.0140 0.0200 0.36 0.50 g 0.0670 0.0826 1.70 2.10 h 0.0040 0.0098 0.10 0.25 j 0.0034 0.0070 0.085 0.177 k 0.0180 0.0236 0.45 0.60 l 0.0350 0.0401 0.89 1.02 s 0.0830 0.0984 2.10 2.50 v 0.0177 0.0236 0.45 0.60 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maxiumum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 1 3 2 a l bs v g d h c k j style 11: pin 1. anode 2. cathode 3. cathodeanode on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. bav99lt1/d thermal clad is a trademark of the bergquist company north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland


▲Up To Search▲   

 
Price & Availability of BAV99LT1-D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X